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Proceedings Paper

Experimental Luttinger parameter determination by confined states in InGaAs/InAlAs multiple quantum well structures
Author(s): Koichi Tanaka; Nobuo Kotera; H. Nakamura
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Paper Abstract

In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures were studied with photocurrent spectroscopy. Based on the envelope function model in the effective mass approximation, effective mass and valence band offset were derived from the experimental eigen energies. The effective masses of the heavy hole and the light hole were 0.39 m0 and 0.051 m0 in a direction normal to the MQWs plane. The valence band offset was 0.22 eV. Luttinger parameters calculated from the effective masses were (gamma) 1 equals 11 and (gamma) 2 equals 4.3. The effective masses in the direction parallel estimated from the Luttinger parameters were 0.065 m0 and 0.14 m0. The parallel mass of the heavy hole estimated by this experiment agreed to the one by cyclotron resonance, 0.061 m0.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341914 (22 June 1998); doi: 10.1117/12.311025
Show Author Affiliations
Koichi Tanaka, Kyushu Institute of Technology (Japan)
Nobuo Kotera, Kyushu Institute of Technology (Japan)
H. Nakamura, Hitachi Central Research Lab. (Japan)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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