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Proceedings Paper

Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy
Author(s): Ru-Chin Tu; Yan-Kuin Su; Ying-Sheng Huang; Shoou-Jinn Chang
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Paper Abstract

A study of near-band-edge optical properties on ZnSe epilayers grown on GaAs substrates using various modulation techniques is presented. We compare the contactless electroreflectance (CER) and piezoereflectance (PzR) spectra to ascertain that our ZnSe epilayers of 1.2 micrometers in thickness grown on GaAs substrates are under a biaxial tensile strain. The defect-related transitions near the ZnSe/GaAs interface are also compared by identifying the photoreflectance (PR) and other spectra. In addition, in order to observe the temperature-dependent energy splitting and strains, we present a detailed investigation of the heavy and light-hole related transition energies as a function of temperature in the 15-200 K range by identifying the excitonic signatures in the CER spectra. We have also calculated the energy splitting between heavy and light-hole valence bands by utilizing the temperature-dependent elastic constants for ZnSe and the thermal-expansion coefficients for ZnSe and GaAs. Both the experimental result and the theoretical calculation have shown a similar trend that the biaxial tensile strains decrease in magnitude with increasing temperatures in the 1.2 micrometers ZnSe epilayer grown on a GaAs substrate.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341913 (22 June 1998); doi: 10.1117/12.311024
Show Author Affiliations
Ru-Chin Tu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Ying-Sheng Huang, National Taiwan Institute of Technology (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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