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Proceedings Paper

Band structure of interdiffused InGaN/GaN quantum wells
Author(s): Elaine M. T. Cheung; Michael C. Y. Chan; E. Herbert Li
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Paper Abstract

Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero- interface. The intermixed structures created by both impurity induced and impurity-free vacancy promoted processes have recently attracted high attention. In recent years, blue green LED and laser of III-nitride semiconductors have attracted a large amount of interest. This is mainly due to its large bandgap range from 1.89eV to 3.44eV. InGaN/GaN single quantum well structures have been used to achieve high lumens blue and green light emitting diodes. In this paper, we will present the band structure of strained InGaN/GaN single quantum well under the influence of interdiffusion. Band structure is a fundamental aspect in determining the electronic and optical properties of the materials such as optical gain, refractive index, absorption, etc.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341912 (22 June 1998); doi: 10.1117/12.311023
Show Author Affiliations
Elaine M. T. Cheung, Univ. of Hong Kong (Hong Kong)
Michael C. Y. Chan, Univ. of Hong Kong (Hong Kong)
E. Herbert Li, Univ. of Hong Kong (United States)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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