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Proceedings Paper

Theoretical model for studying hot phonon effects and electron energy relaxation in GaN: the roles of A1-mode and E1-mode optical phonons
Author(s): Chin-Yi Tsai; Chin-Yao Tsai; Jenkins C.H. Chen; Tien-Li Sung; Fang-Ping Shih; Tsu-Yin Wu
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Paper Abstract

The decay of a zone-center LO-phonon in GaN into a TO phonon and a LA phonon is theoretically investigated, because its decay into two LA phonons is forbidden in GaN. A theoretical model is presented to study the effect of nonequilibrium LO and TO phonons on the electron energy relaxation rate. The individual contributions of A1 mode and E1 optical phonons in the overall electron energy relaxation processes are also discussed.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341911 (22 June 1998); doi: 10.1117/12.311022
Show Author Affiliations
Chin-Yi Tsai, De Montfort Univ. (United Kingdom)
Chin-Yao Tsai, National Cheng Kung Univ. (Taiwan)
Jenkins C.H. Chen, De Montfort Univ. (United Kingdom)
Tien-Li Sung, De Montfort Univ. (United Kingdom)
Fang-Ping Shih, De Montfort Univ. (United Kingdom)
Tsu-Yin Wu, De Montfort Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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