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Proceedings Paper

High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers
Author(s): Shin Shem Pei; C.H. Thompson Lin; Bao Hua Yang; Han Q. Le; Rui Q. Yang; Dongxu Zhang; Stefan J. Murry; Jun Zheng
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Paper Abstract

High power and high quantum efficiency operation of both diode-pumped and interband cascade lasers based on InAs/Ga(In)Sb type-II quantum well with a broken gap band alignment have been demonstrated. The interband cascade laser yielded 0.5 W peak and 16 mW average output per facet under 1- and 5-microsecond(s) long pulses at 80K, while the optically pumped 4-micrometers devices yielded 0.9-1.6 W peak and 90-150 mW average output per facet for 0.1- to 1-ms long pulses at 71K. These output powers are among the highest long-pulse results reported from any semiconductor laser at these wavelengths.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190Y (22 June 1998); doi: 10.1117/12.311018
Show Author Affiliations
Shin Shem Pei, Univ. of Houston (United States)
C.H. Thompson Lin, Univ. of Houston (United States)
Bao Hua Yang, Univ. of Houston (United States)
Han Q. Le, MIT Lincoln Lab. (United States)
Rui Q. Yang, Univ. of Houston (United States)
Dongxu Zhang, Univ. of Houston (United States)
Stefan J. Murry, Univ. of Houston (United States)
Jun Zheng, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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