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Proceedings Paper

Conduction-band mass determinations for n-type InGaAs/InAlAs single quantum wells
Author(s): Eric D. Jones; Nobuo Kotera; John L. Reno; Yongjie Wang
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Paper Abstract

We report the measurement of the conduction band mass in n- type single 27-ML-wide InGaAs/InAlAs quantum well lattice matched to InP using two methods: (1) Magnetoluminescence spectroscopy and (2) far-IR cyclotron resonance. The magnetoluminescence method utilizes Landau level transitions between 0 and 14 T at 1.4 K. The far-IR cyclotron resonance measurements were made at 4.2 K and to fields as large up to 18 T. The 2D-carrier density N2D equals 3 X 1011 cm-2 at low temperatures. The magnetoluminescence technique yielded an effective conduction-band mass of mc equals 0.062m0 while the far-IR cyclotron resonance measurements gave mc equals 0.056m0. Both measurements show no evidence for any significant conduction-band nonparabolicity.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190K (22 June 1998); doi: 10.1117/12.311003
Show Author Affiliations
Eric D. Jones, Sandia National Labs. (United States)
Nobuo Kotera, Kyushu Institute of Technology (Japan)
John L. Reno, Sandia National Labs. (United States)
Yongjie Wang, Florida State Univ. (United States)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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