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Proceedings Paper

Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD
Author(s): Jie Wang; Satoru Tottori; Maosheng Hao; Hisao Sato; Shiro Sakai; Marek Osinski
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Paper Abstract

Selective overgrowth method has been sued to grow GaN epitaxial layers by metalorganic chemical vapor deposition (MOCVD) and sublimation technology. MgO, Si and SiO2 which have different thermal conductivities and thermal expansion coefficients, have been chosen as mask materials. The microstructure and selectively grown GaN and the lateral growth mechanisms of sublimation and MOCVD have also ben investigated by transmission electron microscopy and scanning electron microscopy. The effect of different mask materials on reduction of dislocation density is discussed. The experimental results indicate that Si is the best mask material for GaN lateral overgrowth. The dislocation density is about 109 cm-2 above the window areas, and it is reduced to 106 cm-2 in the lateral overgrowth region above the Si mask.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341902 (22 June 1998); doi: 10.1117/12.311000
Show Author Affiliations
Jie Wang, Univ. of Tokushima (Japan)
Satoru Tottori, Univ. of Tokushima (Japan)
Maosheng Hao, Univ. of Tokushima (Japan)
Hisao Sato, Univ. of Tokushima (Japan)
Shiro Sakai, Univ. of Tokushima (Japan)
Marek Osinski, Univ. of Tokushima (United States)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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