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Proceedings Paper

650-nm GaInP/AlGaInP visible laser diode with buried tapered-ridge structure
Author(s): Jun-Ho Jang; Young-Hak Chang; Hee-Suk Song; Dong-Hwan Kim; Jong-Seok Kim; Tae-Kyung Yoo
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Paper Abstract

A new tapered ridge waveguide structure is employed in GaInP/AlGaInP laser diodes in order to increase (theta) PLL for digital versatile disk optical pick-up application. The dry-etched buried tapered ridge has been fabricated using BCl(subscript 3/Ar plasma in electron cyclotron resonance reactive ion etching system and chemical treatments. The parallel far-field angle was increased up to 9.7 degrees when the width of tapered ridge at the front facet was reduced down to 3.2 micrometers . The threshold current was 60mA and slope efficiency was 0.42W/A, which were comparable to the values of wet-etched lasers. The characteristics temperatures were estimated to be 154K at 25-60 degrees C and 60K at 60-100 degrees C. An operating time of over 1000 hours at the output power of 5mW at 70 degrees C was obtained without significant increase of operating current, which indicates a sufficient reliability for commercial purposes.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190H (22 June 1998); doi: 10.1117/12.310999
Show Author Affiliations
Jun-Ho Jang, LG Corporate Institute of Technology (South Korea)
Young-Hak Chang, LG Corporate Institute of Technology (South Korea)
Hee-Suk Song, LG Corporate Institute of Technology (South Korea)
Dong-Hwan Kim, LG Corporate Institute of Technology (South Korea)
Jong-Seok Kim, LG Corporate Institute of Technology (United States)
Tae-Kyung Yoo, LG Corporate Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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