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Proceedings Paper

Characteristics of AlGaInP/InGaP broad-area laser diodes
Author(s): Hung-Pin D. Yang; Chien Chia Chiu; Jin-Kuo Ho; C. K. Huang
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Paper Abstract

We report the results of the AlGaInP/InGaP broad area laser diodes.the broad area lasers were made with laser cavity- lengths of 250 micrometers to 1.25 mm. The pulsed L-I characteristics of these broad area lasers were measured, as a function of the laser stripe width. The pulse width of the pulsed L-I measurements was 360 nsec and the pulse periods were 10 msec to 5 (mu) sec. The measured pulsed L-I characteristics of the AlGaInP/InGaP lasers were found to be strongly dependent on the duty cycles of the applied voltage pulses, which were attributed to heating effects within the broad area lasers. The threshold current increases with increasing pulse duty cycle, while the external quantum efficiency decreases with increasing duty cycle. Heating effects were negligible only at very low duty cycles of 0.1 percent or below. Similar pulsed L-I measurements were performed on the 850-nm AlGaAs/GaAs broad area lasers. Heating effect was not observed in those measurements because of better heat conduction properties of the AlGaAs cladding layers. The results were carefully analyzed.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190G (22 June 1998); doi: 10.1117/12.310998
Show Author Affiliations
Hung-Pin D. Yang, Industrial Technology Research Institute (Taiwan)
Chien Chia Chiu, Industrial Technology Research Institute (Taiwan)
Jin-Kuo Ho, Industrial Technology Research Institute (Taiwan)
C. K. Huang, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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