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Proceedings Paper

Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications
Author(s): Tsong Sheng Lay; Minghwei Hong; J. P. Mannaerts; C. T. Liu; Jueinai Raynien Kwo; Fan Ren; M. A. Marcus; K. K. Ng; Young-Kai Chen; Li-Jen Chou; Kuang-Chien Hsieh; Keh-Yung Y. Cheng
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Paper Abstract

The novel deposition technique of Ga2O3(Gd2O3) film by using in-situ molecular beam epitaxy (MBE) has led to the first demonstration of enhancement mode GaAs metal oxide semiconductor field effect transistors. For sub- micron GaAs device applications, the current leakage in the gate dielectric of reduced thickness has been an important issue. In this work, we address this aspect for the Ga2O3(Gd2O3) thin films deposited on n-type GaAs and present the electrical characteristics of the GaAs MOS structures as a function of the gate dielectric thickness, varying from 16.6 nm to 7.7 nm. The as-deposited thin dielectric layers show, in dark an inversion layer formation as well as an excellent insulator performance: a gate leakage current density as low as 10-9 A/cm2 at low gate bias up to 2.5 V and the electrical breakdown field reaches above 10 MV/cm. The high resolution transmission electron microscopy measurements show a sharp and uniform dielectric/GaAs transition with interfacial roughness < 1 nm.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190B (22 June 1998); doi: 10.1117/12.310993
Show Author Affiliations
Tsong Sheng Lay, National Sun Yat-Sen Univ. (Taiwan)
Minghwei Hong, Lucent Technologies/Bell Labs. (United States)
J. P. Mannaerts, Lucent Technologies/Bell Labs. (United States)
C. T. Liu, Lucent Technologies/Bell Labs. (United States)
Jueinai Raynien Kwo, Lucent Technologies/Bell Labs. (United States)
Fan Ren, Lucent Technologies/Bell Labs. (United States)
M. A. Marcus, Lucent Technologies/Bell Labs. (United States)
K. K. Ng, Lucent Technologies/Bell Labs. (United States)
Young-Kai Chen, Lucent Technologies/Bell Labs. (United States)
Li-Jen Chou, Univ. of Illinois/Urbana-Champaign (United States)
Kuang-Chien Hsieh, Univ. of Illinois/Urbana-Champaign (United States)
Keh-Yung Y. Cheng, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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