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Proceedings Paper

MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells
Author(s): Rainer Beccard; Harry Protzmann; Dietmar A. Schmitz; Gert Strauch; Michael Heuken; Holger Juergensen
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Paper Abstract

Since the invention of the Planetary Reactors a reliable tool for mass production of various III-V compounds is existing. These reactors have proven to grow extremely uniform films together with a highly efficient utilization of the precursors. Now a new generation of Planetary Reactors is introduced: the so-called G3 systems. Their main features are: an inductive heating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size and the option to use a fully automated cassette-to-cassette wafer loading system. The benefits of this new design are very short cycle times, extreme run-to- run stability and even further reduced cost of ownership. We will present comprehensive data concerning growth of GaAs, AlGaAs, GaInP, AlGaInP and other III-V materials. Special focus will be put on uniformity, efficiency and electrical and optical characteristics of films grown in these machines. The data prove that the G3 systems are the most flexible and efficient reactors to meet the demands of solar cell production for the next decade.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190A (22 June 1998); doi: 10.1117/12.310992
Show Author Affiliations
Rainer Beccard, AIXTRON AG (Germany)
Harry Protzmann, AIXTRON AG (Germany)
Dietmar A. Schmitz, AIXTRON AG (Germany)
Gert Strauch, AIXTRON AG (Germany)
Michael Heuken, RWTH Aachen Inst fuer Halbeitertechnik (Germany)
Holger Juergensen, AIXTRON AG (Germany)


Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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