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Proceedings Paper

Growth shape control of group-III nitrides by selective-area MOVPE
Author(s): Naoki Kobayashi; Tetsuya Akasaka; Seigo Ando; Masami Kumagai
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Paper Abstract

In the selective area metal-organic vapor phase epitaxy, III-V micro-crystals surrounded by low-index crystallographic facets are grown on the open area of the masked substrate. The shape of grown crystal can be controlled by changing the growth condition and/or the mask pattern. On the B substrate, highly symmetrical tetrahedron, hexagonal and regular triangle prisms can be grown in a micrometers scale. The application to micro-lasers called 'facet laser' makes the most use of facet growth because flat and damage-free vertical-facets are best fitted to the laser resonator. Even in group III nitrides, which are extremely hard and chemically inactive, we succeeded in the growth of GaN hexagonal micro prisms and observed the optically pumped room-temperature lasing by ring-cavity mode.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341901 (22 June 1998); doi: 10.1117/12.310989
Show Author Affiliations
Naoki Kobayashi, NTT Basic Research Labs. (Japan)
Tetsuya Akasaka, NTT Basic Research Labs. (Japan)
Seigo Ando, NTT Basic Research Labs. (Japan)
Masami Kumagai, NTT Basic Research Labs. (Japan)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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