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Proceedings Paper

Differences in pattern displacement error under different illumination conditions
Author(s): Nakgeuon Seong; Jongwook Kye; Hoyoung Kang; Joo-Tae Moon
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Paper Abstract

Off-axis illumination (OAI) technique is one of the most widely used resolution enhancement methods for sub 0.2 micrometer resolution in KrF lithography. Repeated patterns in DRAM drove many applications of OAI technique, such as annular, quadruple. There are optimum illumination shapes depending on pattern shapes and pitches. We measured pattern displacement error differences under two types of illumination shapes using box-and-box type overlay keys and real patterns to which we optimized illumination shapes. We focused on the differences of pattern displacement error between two pattern sets rather than pattern displacement error itself. The results show huge differences of overlay readings under various strong OAI settings. Finally, we suggested applying correction tables calculated by simulation with aberration data.

Paper Details

Date Published: 29 June 1998
PDF: 5 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310821
Show Author Affiliations
Nakgeuon Seong, Samsung Electronics Co., Ltd. (United States)
Jongwook Kye, Samsung Electronics Co., Ltd. (United States)
Hoyoung Kang, Samsung Electronics Co., Ltd. (United States)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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