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Proceedings Paper

Exposure effects on deep-ultraviolet resist thickness
Author(s): Pary Baluswamy; Thomas R. Glass
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Paper Abstract

Most deep ultraviolet (DUV) resist models available today utilize the Dill parameters to characterize resist exposure. These models assume that the thickness of the resist remains constant through exposure and post-exposure bake (PEB). The thickness is only affected by development in the models when resist is removed from the exposed or unexposed regions, depending on whether it is a positive or negative resist. It has been observed that a number of DUV resists change thickness upon exposure. This effect is expected to have an impact on the post-exposure acid profile calculated for modeling purposes. In this paper, we present data on the thickness changes for different resists and the effect of exposure to PEB delay on the change.

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310815
Show Author Affiliations
Pary Baluswamy, Micron Technology, Inc. (United States)
Thomas R. Glass, Micron Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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