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Proceedings Paper

Cross-sectional critical shape error: a novel methodology for quantifying process simulation accuracy
Author(s): Mark E. Mason; Robert A. Soper
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Paper Abstract

In an effort to quantify simulator performance, we propose a new metric -- the cross-sectional critical shape error (CCSE). This tool allows quantified comparison of actual resist patterns to simulator predictions, condensing two- and three- dimensional simulation errors into a scalar error value. This value can be used as a figure of merit to ascertain optimum simulator settings for matching actual experimental output. This effort extends previous work by Mack on the so-called 'critical shape error' (CSE) metric for evaluating differences between the mask and simulated resist patterns. While the work by Mack was directed primarily at OPC, CCSE is appropriate for quantitative simulator evaluations, simulator anchoring, head- to-head simulator evaluations, and use in optimizing cost functions (e.g. for use in Genetic Algorithms, etc.) since it compares the simulator output directly to the resist cross section.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310806
Show Author Affiliations
Mark E. Mason, Texas Instruments Inc. (United States)
Robert A. Soper, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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