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Proceedings Paper

Optimization of ARC process in DUV lithography
Author(s): Kyung-Jin Shim; Byoung-Il Choi; Ki-Yeop Park; Won-Kyu Lee
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Paper Abstract

Inorganic Anti Reflective Coating (ARC) improves Critical Dimension (CD) uniformity over an exposing field by reducing the reflectivity of the ARC/substrate system in photoresist. A key parameter of the lithographic performance of an inorganic ARC is therefore the reflectivity of the ARC/substrate system in photoresist. But it isn't a directly measurable quantity. In this paper we estimate the reflectivity of the ARC/substrate system in photoresist by measuring the reflectivity swing of the photoresist/ARC/substrate system in air. We also derive a useful relation connecting the reflectivity of the ARC/substrate system in photoresist to that in air. In the case of organic ARC, due to the planarization of the organic ARC on topography, optimization is achieved not by minimizing the reflectivity of the ARC/substrate system in photoresist but by minimizing the variation of the light intensity within the photoresist. The performance of the inorganic and organic ARC for DUV lithography is evaluated, and their differences are investigated.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310801
Show Author Affiliations
Kyung-Jin Shim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Byoung-Il Choi, Hyundai Electronics Industries Co., Ltd. (Singapore)
Ki-Yeop Park, Hyundai Electronics Industries Co., Ltd. (South Korea)
Won-Kyu Lee, Hyundai Electronics Industries Co.,Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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