Share Email Print

Proceedings Paper

CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-um gate printing
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper, the intra-field critical dimension (CD) control of a KrF step&scan and step&repeat system are investigated and compared. The scanners are expected to replace the conventional steppers in the manufacturing of integrated circuit generation of 0.18 micrometer and beyond, because of the larger field size and the intrinsic improvement in intra- field CD and overlay control using comparable lens design, complexity and cost. The work has been focused on sub-0.25 micrometer critical dimensions. A reticle design for both top- down CD measurements and electrical linewidth probing has allowed massive data collection and investigation of the impact of the metrology technique in CD control studies. From this study, it can be concluded that the stepper and scanner exhibit similar CD control at best focus, but the scanner improves the CD control of the stepper if the considered focus range increases. The CD control is governed by the reticle CD non-uniformity. Focus budget calculations indicate that reticle CD ranges of 40 nm (4x) are needed to bring the CD control of 0.2 micrometer grouped lines within acceptable ranges for realistic gate levels. For isolated lines, dedicated deep-UV resists and resolution enhancement techniques will be needed on top of this to obtain similar CD control.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310789
Show Author Affiliations
Kurt G. Ronse, IMEC (Belgium)
Mireille Maenhoudt, IMEC (Belgium)
Thomas Marschner, IMEC (Germany)
Luc Van den hove, IMEC (Belgium)
Bob Streefkerk, ASM Lithography BV (Netherlands)
Jo Finders, ASM Lithography BV (Netherlands)
Jan B.P. van Schoot, ASM Lithography BV (Netherlands)
Paul Frank Luehrmann, ASM Lithography BV (United States)
Anna Maria Minvielle, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

© SPIE. Terms of Use
Back to Top