Proceedings PaperPrinting sub-100-nm random logic patterns using binary masks and synthetic-aperture lithography (SAL)
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Synthetic-aperture lithography (SAL) is proposed as a means for reaching design-rules of 0.1 micrometer and below. By a combination of oblique illumination and pupil filtering the relation between high and low spatial frequencies in the image is altered. Simulations indicate that random-logic patterns can be printed at k1 equals 0.40 with only modest OPC. With some design constraints and/or a corrective auxiliary exposure k1 equals 0.32 is possible. The main disadvantages are a complex stepper design and low light transmission, the advantages are the use of standard binary masks and good useful resolution.