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Proceedings Paper

Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask
Author(s): Lay Cheng Choo; Siu Chung Tam; Alex Cheng; Ida Chui Shan Ho
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Paper Abstract

Attenuated phase shift mask (APSM) has been considered a viable technique for contact patterning. For 250 nm lithography technology, 300 nm contact patterns are to be defined. In this paper, Solid-C has been used for aerial image simulations. Conventional and annular illumination settings are optimized for better focus latitudes, that is, large depth-of-focus (DOF), for sufficient throughput. In addition, mask transmission is optimized for different illumination settings. From our simulations of aerial images, it has been shown that a DOF of 1.35 micrometer is achieved when conventional illumination is combined with APSM at high mask transmission (approximately 8 - 10%). However a larger DOF of 1.55 micrometer can be obtained when annular illumination is used with APSM at low mask transmission (approximately 3 - 4%).

Paper Details

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310785
Show Author Affiliations
Lay Cheng Choo, Nanyang Technological Univ. (Singapore)
Siu Chung Tam, Nanyang Technological Univ. (Singapore)
Alex Cheng, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Ida Chui Shan Ho, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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