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Proceedings Paper

Preventing sidelobe printing in applying attenuated phase-shift reticles
Author(s): Z. Mark Ma; Andrew Andersson
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Paper Abstract

One major limitation of applying attenuated phase shift mask (PSM) is sidelobe printing. The sidelobe is caused by constructive interference of the first order of diffraction maximum from nearby features, plus the electrical fields from semi-transparent materials in the surrounding area. The impact of defocus, lens aberration, and layout design on sidelobe printing are discussed. A detailed comparison between printed wafers and aerial image simulations shows how these factors affect sidelobe printing. Data show tight control on both the third and the fifth order aberrations is critical in PSM application. Since the degree of coherence and the stepper's response to coherence transfer function will significantly affect the performance of PSM, tests on phase shift mask are necessary to qualify a stepper. An alternative approach that uses attenuated rim shifter PSM to prevent sidelobe printing is presented and discussed.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310783
Show Author Affiliations
Z. Mark Ma, Texas Instruments Inc. (United States)
Andrew Andersson, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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