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Proceedings Paper

Damage testing of pellicles for 193-nm lithography
Author(s): Vladimir Liberman; Roderick R. Kunz; Mordechai Rothschild; Jan H. C. Sedlacek; Ray S. Uttaro; Andrew Grenville; Allen Keith Bates; Chris K. Van Peski
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Paper Abstract

We investigated laser-induced damage of pellicles for 193-nm lithography. We surveyed 193-nm-optimized material from three pellicle suppliers. Pellicles were irradiated under realistic reticle plane conditions (0.04 mJ/cm2/pulse - 0.12 mJ/cm2/pulse for up to 100 million pulses). Pellicles from two suppliers were found to meet lifetime requirements of the industry. Pellicles from the third supplier do not appear to meet the lifetime requirements. We present fluence scaling of pellicle damage and discuss effects of the ambient on pellicle degradation rates. We present results of the outgassing studies of pellicle material under irradiation using a separate gas chromatograph-mass spectrometer-based detection apparatus. From the results of these studies, we suggest possible photochemical pathways for pellicle degradation as a function of ambient.

Paper Details

Date Published: 29 June 1998
PDF: 16 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310776
Show Author Affiliations
Vladimir Liberman, MIT Lincoln Lab. (United States)
Roderick R. Kunz, MIT Lincoln Lab. (United States)
Mordechai Rothschild, MIT Lincoln Lab. (United States)
Jan H. C. Sedlacek, MIT Lincoln Lab. (United States)
Ray S. Uttaro, MIT Lincoln Lab. (United States)
Andrew Grenville, Intel Corp. (United States)
Allen Keith Bates, IBM Corp. and SEMATECH (United States)
Chris K. Van Peski, SEMATECH (United States)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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