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Proceedings Paper

Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask
Author(s): Takashi Nakabayashi; Koji Matsuoka; Shigeo Irie; Hiromasa Fujimoto; Takayuki Yamada; Shuichi Mayumi
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Paper Abstract

Application of a multi-phase-shifting mask to hole arrays for giga-bit DRAM has been studied. Self-aligned contact plugs for a cell pitch of 0.38 micrometer under the bit-line contacts and the storage-node contacts have been formed at the same time by using a multi-phase-shifting mask with two different phase-shifters. Sufficient depth of focus (DOF) of 0.8 micrometer has been obtained. Furthermore, hole-shape distortion caused by focus offset can be suppressed under the off-axis illumination condition with a quadrupole aperture

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310770
Show Author Affiliations
Takashi Nakabayashi, Matsushita Electronics Corp. (Japan)
Koji Matsuoka, Matsushita Electronics Corp. (Japan)
Shigeo Irie, Matsushita Electronics Corp. (Japan)
Hiromasa Fujimoto, Matsushita Electronics Corp. (Japan)
Takayuki Yamada, Matsushita Electronics Corp. (Japan)
Shuichi Mayumi, Matsushita Electronics Corp. (Japan)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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