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Proceedings Paper

New projection optical system for beyond 150-nm patterning with KrF and ArF sources
Author(s): Shigeru Hirukawa; Koichi Matsumoto; Kengo Takemasa
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Paper Abstract

Two types of new optical system for 150 nm lithography are studied. One is the system with KrF source and high numerical aperture (NA), the other is the system with ArF source. By aerial image simulation, the adequate NA of each projection lens is searched, and the value was 0.68 for KrF source and 0.60 for ArF source. Then the projection lens is fabricated and evaluated. The results are almost same as those of simulation.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310769
Show Author Affiliations
Shigeru Hirukawa, Nikon Corp. (Japan)
Koichi Matsumoto, Nikon Corp. (Japan)
Kengo Takemasa, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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