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Proceedings Paper

Deep-UV reflection control for patterning dielectric layers
Author(s): Ramkumar Subramanian; Gurjeet S. Bains; Christopher F. Lyons; Bhanwar Singh; Ernesto Gallardo
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Paper Abstract

This paper describes the results of CD control studies on a dielectric layer that has both dense & isolated trenches and dense contact holes. Both top and bottom anti-reflective coatings were explored as well as the standard process without ARC. All wafers had a standard logic technology process flow and had been through Chemical-Mechanical Planarization prior to patterning. Stepper exposure conditions were varied in the form of partial coherence to obtain maximum depth of focus and exposure latitude. The results of this study were characterized in the form of a CD process window in which Exposure Dose was plotted vs. Defocus for all the 3 patterns i.e. dense & isolated trenches and dense contact holes. The effect of BARC etch was also explored.

Paper Details

Date Published: 29 June 1998
PDF: 15 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310765
Show Author Affiliations
Ramkumar Subramanian, Advanced Micro Devices, Inc. (United States)
Gurjeet S. Bains, Advanced Micro Devices, Inc. (United States)
Christopher F. Lyons, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)
Ernesto Gallardo, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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