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Proceedings Paper

Influence of underlayer reflection on optical proximity effects in sub-quarter-micron lithography
Author(s): Atsushi Sekiguchi; Fumikatsu Uesawa; Koichi Takeuchi; Tatsuji Oda
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Paper Abstract

The relationship between the optical proximity effect (OPE) and the underlayer reflection has been investigated by using negative and positive resists in sub-quarter-micrometer lithography. A new evaluation method that uses the center exposure dose of the ED-window (1-2) is been proposed. This technique takes the manufacturing margin into consideration and can be used to obtain the common ED-window of isolated and density patterns. The negative resists show a small critical dimension variation between isolated and density lines (CD bias) with the most suitable exposure dose and best focus conditions. However, the common ED-window of the isolated and density patterns is poor in terms of the manufacturing margin. Furthermore, the (sigma) dependence of the negative resist is too weak to improve the manufacturing margin. The effect of the underlayer reflection on the CD bias of the negative resist is significant in our experiment. On the other hand, the positive resist shows strong (sigma) dependence. Because the influence of the underlayer reflection on the positive resist is small, it is important to optimize (sigma) when improving the CD bias for the positive resist. In order to compare the negative and positive resists under equivalent conditions, a resist development simulation was used. The simulation results show the negative resist could be capable of high performance.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310764
Show Author Affiliations
Atsushi Sekiguchi, Sony Corp. (Japan)
Fumikatsu Uesawa, Sony Corp. (Japan)
Koichi Takeuchi, Sony Corp. (Japan)
Tatsuji Oda, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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