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Proceedings Paper

Bottom-ARC optimization methodology for 0.25-um lithography and beyond
Author(s): Maaike Op de Beeck; Geert Vandenberghe; Patrick Jaenen; Feng-Hong Zhang; Christie Delvaux; Paul Richardson; Ilse van Puyenbroeck; Kurt G. Ronse; James E. Lamb III; Johan B. C. van der Hilst; Johannes van Wingerden
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Paper Abstract

This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC properties, turned out to be of major importance: planarization effects on topography and etch behavior. The topography itself is very important too: step height and lateral dimensions have a severe influence on CD control. Based on a new evaluation technique, the use of topographical swing curves, the optimum thickness of the BARC layer and of the resist layer are determined.

Paper Details

Date Published: 29 June 1998
PDF: 15 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310762
Show Author Affiliations
Maaike Op de Beeck, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Patrick Jaenen, IMEC (Belgium)
Feng-Hong Zhang, IMEC (Belgium)
Christie Delvaux, IMEC (Belgium)
Paul Richardson, IMEC (United States)
Ilse van Puyenbroeck, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)
James E. Lamb III, Brewer Science, Inc. (United States)
Johan B. C. van der Hilst, ASM Japan (Japan)
Johannes van Wingerden, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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