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Proceedings Paper

0.18-um optical lithography performances using an alternating DUV phase-shift mask
Author(s): Yorick Trouiller; N. Buffet; Thierry Mourier; Patrick Schiavone; Yves Quere
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Paper Abstract

The phase shift mask (PSM) is a key emerging technology thought to be extending 248 nm lithography. In this paper, we describe the lithographic performances of Shipley UV5 photoresist on SiOxNy Bottom Anti Reflective coating (BARC), using alternating PSM and ASM/90 Deep-UV stepper. Results on 0.18 micrometer design rules are presented: lithographic performances, comparison between PSM and binary mask, sub 0.18 micrometer performances ({1}) and the ultimate resolution of this technology are reported. To conclude we demonstrated the 0.18 micrometer lithography feasibility with alternating mask and KrF stepper, and showed that all the necessary tools are today available to achieve such goals.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310761
Show Author Affiliations
Yorick Trouiller, CEA-LETI (France)
N. Buffet, CEA-LETI (France)
Thierry Mourier, CEA-LETI (France)
Patrick Schiavone, France Telecom CNET-CNS (France)
Yves Quere, CEA-LETI (France)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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