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Proceedings Paper

ArF excimer laser lithography with bottom antireflective coating
Author(s): Shinji Kishimura; Makoto Takahashi; Keisuke Nakazawa; Takeshi Ohfuji; Masaru Sasago; Masaya Uematsu; Tohru Ogawa; Hiroshi Ohtsuka
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Paper Abstract

In ArF excimer laser lithography, the bottom antireflective coating (BARC) technique is essential in inhibiting the effect of interference and reflective notching. We investigated the antireflective effect of commercially available organic BARCs, that had originally been designed for KrF and i-line lithography, and also the patterning characteristics of ArF resists with BARCs. The refractive indices of various materials were measured with a spectroscopic ellipsometer. The real part (n) and the imaginary part (k) of the complex refractive index at 193 nm were 1.4 to 1.7 and 0.1 to 0.8 respectively. Almost all the materials had sufficient antireflectivity at 193 nm. We investigated the patterning characteristics of chemically amplified ArF positive resists with suitable BARC materials. The resolution, the depth-of- focus of patterns below 0.16-micrometer lines and spaces, and the exposure latitude were improved and good critical dimensional control over topography was achieved by using BARC. An acceptable profile after gate structure (BARC, W-Si, and Poly-Si) etching could be obtained under the typical etching conditions used for KrF resists.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310760
Show Author Affiliations
Shinji Kishimura, Association of Super-Advanced Electronics Technologies (Japan)
Makoto Takahashi, Association of Super-Advanced Electronics Technologies (United States)
Keisuke Nakazawa, Association of Super-Advanced Electronics Technologies (Japan)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)
Masaya Uematsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tohru Ogawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroshi Ohtsuka, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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