Share Email Print

Proceedings Paper

Applications of enhanced optical proximity correction models
Author(s): Jack Q. Zhao; Joseph G. Garofalo; James W. Blatchford; Edward Ehrlacher; Ellis Nease
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The accurate prediction of relevant optical and other processing effects is the essential first element of optical proximity effect (OPC) methodologies. A quasi-empirical modeling technique has been devised. Starting from standard aerial-image energy deposition, an exponential transfer function is employed to account for saturation effects. This is then followed by a double-Gaussian diffusion convolution. Finally, a novel 2-dimensional log-slope model was devised to better predict some DUV processes. The model parameters are derived from a few empirical measurements and a fitting process. The calibrated model is then used by a rule-based OPC package to correct a variety of structures. Efficient verification techniques suitable for large area designs are introduced.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310753
Show Author Affiliations
Jack Q. Zhao, Lucent Technologies/Bell Labs. (United States)
Joseph G. Garofalo, Lucent Technologies/Bell Labs. (United States)
James W. Blatchford, Lucent Technologies/Bell Labs. (United States)
Edward Ehrlacher, Lucent Technologies/Bell Labs. (United States)
Ellis Nease, Lucent Technologies (United States)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

© SPIE. Terms of Use
Back to Top