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Proceedings Paper

Applications of enhanced optical proximity correction models
Author(s): Jack Q. Zhao; Joseph G. Garofalo; James W. Blatchford; Edward Ehrlacher; Ellis Nease
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Paper Abstract

The accurate prediction of relevant optical and other processing effects is the essential first element of optical proximity effect (OPC) methodologies. A quasi-empirical modeling technique has been devised. Starting from standard aerial-image energy deposition, an exponential transfer function is employed to account for saturation effects. This is then followed by a double-Gaussian diffusion convolution. Finally, a novel 2-dimensional log-slope model was devised to better predict some DUV processes. The model parameters are derived from a few empirical measurements and a fitting process. The calibrated model is then used by a rule-based OPC package to correct a variety of structures. Efficient verification techniques suitable for large area designs are introduced.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310753
Show Author Affiliations
Jack Q. Zhao, Lucent Technologies/Bell Labs. (United States)
Joseph G. Garofalo, Lucent Technologies/Bell Labs. (United States)
James W. Blatchford, Lucent Technologies/Bell Labs. (United States)
Edward Ehrlacher, Lucent Technologies/Bell Labs. (United States)
Ellis Nease, Lucent Technologies (United States)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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