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Proceedings Paper

Lithographic process simulation for scanners
Author(s): Andreas Erdmann; Michael Arnz; Mireille Maenhoudt; Jan Baselmans; Jan-Chris van Osnabrugge
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Paper Abstract

In scanner systems wafer and reticle move continuously with respect to the projection optics. This movement across the image field results in varying lateral shift and focus positions and in an averaging of aberrations from different field positions of the projection system. Several approaches for the effective simulation of these effects are discussed. Based on simulated and experimental data, scanner effect are quantified and compared to results of static stepper exposure.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310746
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute for Silicon Technology (Germany)
Michael Arnz, Carl Zeiss (Germany)
Mireille Maenhoudt, IMEC (Belgium)
Jan Baselmans, ASM Lithography BV (Netherlands)
Jan-Chris van Osnabrugge, ASM Lithography BV (Netherlands)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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