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Proceedings Paper

Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design
Author(s): Hiroshi Fukuda; Keiko T. Hattori
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Paper Abstract

The aberration in optics and acid diffusion in resist films have a great influence on proximity effects in optical lithography. Our analysis clarified that (1) a local (random) pupil-phase variation (higher-order aberration) degrades imaging performance under highly coherent illumination often used with periodic phase-shifting masks, and (2) in some positive-tone chemically amplified resists, the non-Fickean diffusion process changes effective image distributions, depending on the patterns features and mask tonality. Although the latter has a potential to achieve high resolution capability for isolated bright features, these effects generally pronounce proximity effects and make their correction difficult. Simple modeling of these effects and their simulation implementation are also discussed.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310745
Show Author Affiliations
Hiroshi Fukuda, Hitachi Central Research Lab. (Japan)
Keiko T. Hattori, Hitachi Central Research Lab. (Japan)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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