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Proceedings Paper

Improvement of overlay in the oxide- and W-chemical-mechanical polish processes
Author(s): Sen-Shan Yang
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Paper Abstract

The issue regarding wafer alignment is arisen due to flattening of the alignment mark topography by oxide- and W- CMP process. This results in degradation in alignment signal intensity which is a crucial factor affecting overlay accuracy. Computer simulation of alignment signal intensity for the oxide- and W-CMP processes has been successfully performed. Result indicates alignment signal intensity swings with depth of the phase grating alignment mark. A critical range of depth has to be maintained for achieving alignment signal intensity high enough for overlay accuracy. The W-CMP process is thus utilized for obtaining depth of alignment mark within this range. Experiment has successfully demonstrated improvement in overlay.

Paper Details

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310740
Show Author Affiliations
Sen-Shan Yang, World-Wide Semiconductor Manufacturing Corp. (Taiwan)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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