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Proceedings Paper

Reduction of mask-induced CD errors by optical proximity correction
Author(s): John Randall; Alexander V. Tritchkov; Rik M. Jonckheere; Patrick Jaenen; Kurt G. Ronse
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Paper Abstract

The critical dimension (CD) tolerance specifications for masks have not only been required to keep up with the unrelenting drive of downscaling and a shift from 5X to 4X reticles, but will soon have to deal with lithographic magnification of mask CD errors. Nonlinearities in both the imaging system and resist response will exacerbate CD errors in the mask. A pupil filtering technique has been proposed to reduce the optical component of mask error magnification, but this is only effective for dense features. This paper describes a possible method of reducing the effect of mask CD errors for isolated features. Sub-resolution assisting features or outriggers are used to reduce proximity effects and to improve the depth of focus of isolated lines. We have demonstrated that correlated errors in lines and associated outriggers can reduce the impact of mask CD errors. The experiments used to verify this effect in 248 nm lithography also demonstrated nonlinearity in the resist that increased the mask error magnification.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310737
Show Author Affiliations
John Randall, Texas Instruments and IMEC (Belgium)
Alexander V. Tritchkov, IMEC (United States)
Rik M. Jonckheere, IMEC (Belgium)
Patrick Jaenen, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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