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Proceedings Paper

ArF lasers for production of semiconductor devices with CD<0.15 um
Author(s): Thomas P. Duffey; Todd J. Embree; Toshihiko Ishihara; Richard G. Morton; William N. Partlo; Tom A. Watson; Richard L. Sandstrom
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Paper Abstract

The present day notion of the extensibility of KrF laser technology to ArF is revisited. We show that a robust solution to ArF requirements can be met by significantly altering the laser's core technology-discharge chamber, pulsed power and optics. With these changes, a practical ArF tool can be developed. Some of the laser specifications are: Bandwidth: 0.6 pm (FWHM) 1.75 pm (95% Included Energy); Average Power: 5 W; Repetition Rate: 1000 Hz; Energy Stability (3(sigma) ): 20% (burst mode) 8% (continuous); Pulse Width: 25 ns.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310731
Show Author Affiliations
Thomas P. Duffey, Cymer, Inc. (United States)
Todd J. Embree, Cymer, Inc. (United States)
Toshihiko Ishihara, Cymer, Inc. (United States)
Richard G. Morton, Cymer, Inc. (United States)
William N. Partlo, Cymer, Inc. (United States)
Tom A. Watson, Cymer, Inc. (United States)
Richard L. Sandstrom, Cymer, Inc. (United States)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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