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Proceedings Paper

ArF excimer laser for 193-nm lithography
Author(s): Uwe Stamm; Rainer Paetzel; Juergen Kleinschmidt; Klaus Vogler; Wolfgang Zschocke; Igor Bragin; Dirk Basting
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Paper Abstract

Considerable progress has been made in the development of the major components for 193 nm lithography tools. Here we describe the parameters of a line-narrowed ArF excimer laser for microlithography. With a specified FWHM bandwidth of less than 0.7 pm, the laser is applicable for refractive steppers and scanners which utilize some degree of achromatization. Prototype lasers have been built to study the optimum parameters. The main challenge of the development was the achievement of high efficiency in the conversion from the laser's broadband emission into line-narrowed emission. The lasers are operated at up to 1 kHz repetition rate with a maximum power of 10 W. This paper provides an overview of the currently achievable power levels, energy stability and bandwidths and discusses future trends.

Paper Details

Date Published: 29 June 1998
PDF: 4 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310730
Show Author Affiliations
Uwe Stamm, Lambda Physik GmbH (Germany)
Rainer Paetzel, Lambda Physik GmbH (Germany)
Juergen Kleinschmidt, Lambda Physik GmbH (Germany)
Klaus Vogler, Lambda Physik GmbH (Germany)
Wolfgang Zschocke, Lambda Physik GmbH (Germany)
Igor Bragin, Lambda Physik GmbH (Germany)
Dirk Basting, Lambda Physik, Inc. (United States)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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