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Proceedings Paper

DUV synchrotron exposure station at CAMD
Author(s): Chantal G. Khan Malek; Volker Saile; J. Michael Klopf; Louis Rupp; Steven Nguyen
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Paper Abstract

A new synchrotron radiation exposure station dedicated to deep-UV exposures has been installed at the synchrotron light source at the Center for Advanced Microstructures and Devices (CAMD). It complements the activities in synchrotron-based lithography including X-ray lithography, deep X-ray lithography, and under way, ultra-deep X-ray lithography. The UV station branches out of the X-ray lithography beamline. A retractable Si mirror reflects the incoming synchrotron radiation beam by 90 deg through a CaF2 window. Three insertable bandpass filters allow the selection of broad-band transmission spectra around the wavelengths of two excimer lasers at 248 nm (KrF) and 193 nm (ArF), and at a shorter wavelength of 187 nm. The station allows for exposures under vacuum or in an inert gas atmosphere.

Paper Details

Date Published: 29 June 1998
PDF: 5 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310729
Show Author Affiliations
Chantal G. Khan Malek, Louisiana State Univ. (France)
Volker Saile, Louisiana State Univ. (United States)
J. Michael Klopf, Louisiana State Univ. (United States)
Louis Rupp, Louisiana State Univ. (United States)
Steven Nguyen, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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