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Proceedings Paper

Lithography of 180-nm design rule for 1-Gb DRAM
Author(s): Dongseok Nam; Junghyun Lee; Chang-Hwan Kim; Seong-Woon Choi; Hoyoung Kang; Joo-Tae Moon
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Paper Abstract

Optical lithography is the most fundamental technology for the development of 1 Gbit DRAM device. As a current status, KrF lithography is a powerful candidate for 180 nm generation because of relatively high cost of ArF lithography and its untimely applicability to mass production. In this paper, we showed that the optimized OAI system with large quadrupole offset and small opening could improve the resolution and process margin in the photo process of 180 nm level DRAM devices. We also demonstrated what the effect of CD amplification factor ((alpha) ) was related to the mask CD control and resist tone under the optimized OAI system. The result shows that the combination of the optimized OAI system and positive tone resist can give rise to the reduction of (alpha) from 4.5 to almost 1 and provide a reasonable margin.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310727
Show Author Affiliations
Dongseok Nam, Samsung Electronics Co., Ltd. (South Korea)
Junghyun Lee, Samsung Electronics Co., Ltd. (South Korea)
Chang-Hwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Hoyoung Kang, Samsung Electronics Co., Ltd. (United States)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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