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Proceedings Paper

New distortion metrology using reticle coordinate error
Author(s): Izumi Tsukamoto; Hirohiko Shinonaga
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Paper Abstract

There are several ways to measure distortion of lithography exposure equipment, and with each of the distortion metrology technique, coordinate errors of distortion measurement pattern on the reticle affect distortion measurements. The most common way to remove the impact of the reticle coordinate error is to measure such errors in advance using a pattern placement metrology tool and correct distortion measurements based on the coordinate error. We have found, however, that when measuring distortion using two different reticles on the same exposure tool, the two measurement results did not agree with each other with a difference at a 20 nm level (3 sigma) even after being corrected according to the measured reticle coordinate error. After studying this problem, we successfully had distortion measurements on the wafer using two different reticles agree with each other at a 10 nm level (3 sigma) by introducing a technique called STofs., system offset, method. This paper reports that exposure tool distortion can be extracted with more precision by applying the new reticle coordinate error measurement technique.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310723
Show Author Affiliations
Izumi Tsukamoto, Canon Inc. (Japan)
Hirohiko Shinonaga, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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