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Proceedings Paper

Control of defects in EUV multilayers and demonstration of at-wavelength defect characterization by EUV microscopy
Author(s): Eric Louis; Mark J. H. den Hartog; Edward L. G. Maas; Fred Bijkerk
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Paper Abstract

In EUV optical elements microscopic imperfections in multilayer coatings give rise to increased scatter and reduced integrated reflectivity. If however, the coating is in the object plane of an imaging system, the defects can be imaged. In this study, experimental work is presented on characterization of the defect density and the nature of the defects in molybdenum/silicon-multilayer coatings produced by e-beam evaporation in combination with ion-beam smoothing of the interfaces. To determine in which process steps defects are created, and how these defects can be avoided, several process parameters have been varied during single- and multilayer deposition and ion-polishing. The samples have been characterized by means of an optical particle counter and electron microscopy with energy dispersive x-ray analysis measurement capabilities. To carry out in-depth inspection of the coating, we developed a method to measure the total integrated scatter for EUV radiation from a 1 micrometers spot. Varying the photon energy around the Si- absorption edge enabled us to distinguish between surface defects and in-depth defects that cannot be seen at the multilayer surface.

Paper Details

Date Published: 5 June 1998
PDF: 6 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309634
Show Author Affiliations
Eric Louis, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)
Mark J. H. den Hartog, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)
Edward L. G. Maas, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)
Fred Bijkerk, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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