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Proceedings Paper

Critical issues for developing a high-throughput SCALPEL system for sub-0.18-um lithography generations
Author(s): Stuart T. Stanton; James Alexander Liddle; Warren K. Waskiewicz; Masis M. Mkrtchyan; Anthony E. Novembre; Lloyd R. Harriott
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Paper Abstract

The potential for SCALPEL to provide economically viable production lithography capabilities for post-optical generations depends largely on achieving adequate wafer throughput. We have analyzed throughput-limiting performance attributes of the SCALPEL approach in order to identify critical design issues and develop a process for evaluating its unique parameter space. An important feature of the SCALPEL approach is that small image sub-fields are assembled to form complete device patterns. Further, electron-electron interactions result in a throughput- dependent image blur, which is a governing parameter for many inter-related performance areas of SCALPEL. Error budgets for key issues affecting critical dimension (CD) have been developed to analyze this unique design space, using models of the image-forming process including stitching on sub-field seams. These budgets assist in identifying the most critical design issues and demonstrating their inter-relationships and tradeoffs.

Paper Details

Date Published: 5 June 1998
PDF: 16 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309631
Show Author Affiliations
Stuart T. Stanton, Integrated Solutions, Inc. (United States)
James Alexander Liddle, Lucent Technologies/Bell Labs. (United States)
Warren K. Waskiewicz, Lucent Technologies/Bell Labs. (United States)
Masis M. Mkrtchyan, Lucent Technologies/Bell Labs. (United States)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Lloyd R. Harriott, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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