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Proceedings Paper

Analysis, design, and optimization of ion-beam lithography masks
Author(s): Richard O. Tejeda; Roxann L. Engelstad; Edward G. Lovell; Ivan L. Berry
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Paper Abstract

The error budget allotted to a lithographic mask is generally only a small fraction of the critical dimension of the device features. Consequently, ion projection lithography in the sub-0.13 micrometers technology regime will place large demands on image placement accuracy, a component of which is mask distortion. During the design stage then, it is desirable to identify those intrinsic loads which distort the mask pattern from its intended shape and, ultimately, to reduce those distortions to an acceptable level. This paper assesses the in-plane distortions (IPD) due to gravity as a function of the mask's geometric parameters. The optimal mask geometry is identified by minimizing the IPD function.

Paper Details

Date Published: 5 June 1998
PDF: 8 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309624
Show Author Affiliations
Richard O. Tejeda, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Ivan L. Berry, Microelectronics Research Lab. (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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