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Proceedings Paper

Equivalent modeling of SCALPEL mask membrane distortions
Author(s): Gerald A. Dicks; Roxann L. Engelstad; Edward G. Lovell; James Alexander Liddle
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Paper Abstract

Considering semiconductor industry projections, sub-0.10 micrometers technology will most likely require a new advanced lithography. Scattering with Angular Limitation Projection Electron-beam Lithography (SCALPEL) is one such lithography being developed to meet this need. As with all lithographies, successful implementation of the SCALPEL technique is dependent upon the development of a low- distortion mask; distortions lead to pattern placement errors on the integrated circuit. Therefore, finite element (FE) models have been developed in order to quantify and minimize mask membrane distortions. The support grillage, i.e., the struts, in the pattern area on a SCALPEL mask require a large number of elements to determine mechanical displacements of the mask membrane. The element density becomes computationally expensive and may exceed the computer hardware limitations. Therefore, an equivalent modeling technique has been developed to reduce the number of elements required to simulate the behavior of the mask, thereby reducing computation time and remaining within the computer hardware limitations.

Paper Details

Date Published: 5 June 1998
PDF: 9 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309623
Show Author Affiliations
Gerald A. Dicks, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
James Alexander Liddle, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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