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Proceedings Paper

Application of development-free vapor photolithography in etching silicon nitride
Author(s): Xiaoyin Hong; Shengquan Duan; Jianping Lu; Peiqing Wang; Yongqi Chen
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Paper Abstract

A new dry etching technique--development-free vapor photolithography was used to transfer pattern on silicon nitride film. Plasma enhanced chemical vapor deposition silicon nitride film and thin low pressure chemical vapor deposition silicon nitride film can be etched to get positive pattern. The difference of etching rate between exposed area and unexposed area was attributed to the concentration difference of accelerators which was realized through photochemical reaction. The reaction mechanism and other phenomena have also been discussed.

Paper Details

Date Published: 5 June 1998
PDF: 9 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309603
Show Author Affiliations
Xiaoyin Hong, Tsinghua Univ (China)
Shengquan Duan, Tsinghua Univ (China)
Jianping Lu, Tsinghua Univ (China)
Peiqing Wang, Tsinghua Univ (China)
Yongqi Chen, Tsinghua Univ (China)

Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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