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Proceedings Paper

Optimization of pattern shape in electron-beam cell projection lithography
Author(s): Takahiro Ema; Hiroshi Yamashita; Ken Nakajima; Hideo Kobinata; Hiroshi Nozue
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Paper Abstract

In electron-beam cell projection lithography, it is important to achieve high resolution and high throughput enough for use in mass production. Mask bias method has been demonstrated to be very effective in improving both performance. However, factors of mask bias effects have not been clarified. In this paper, we have analyzed the factors of the mask bias effects and have discussed a method for estimating the optimum bias. We have found that the decrease of beam blur due to the Coulomb interaction and expansion the space of streams to decrease the beam overlapping neighboring each other are the main factors and that the back-scattering effect can be negligible. Finally, we have derived and proposed a method for obtaining the optimum mask bias that produces high resolution and high throughput.

Paper Details

Date Published: 5 June 1998
PDF: 7 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309601
Show Author Affiliations
Takahiro Ema, NEC Corp. (Japan)
Hiroshi Yamashita, NEC Corp. (Japan)
Ken Nakajima, NEC Corp. (Japan)
Hideo Kobinata, NEC Corp. (Japan)
Hiroshi Nozue, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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