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Proceedings Paper

Top-surface imaging resists for EUV lithography
Author(s): Craig C. Henderson; David R. Wheeler; Tim P. Pollagi; Donna J. O'Connell; John E. M. Goldsmith; Aaron Fisher; Gregory Frank Cardinale; John M. Hutchinson; Veena Rao
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Paper Abstract

The strong attenuation of extreme UV (EUV) radiation by organic materials necessities the use of a thin layer imaging (TLI) process for EUV lithography. Several TLI processes have been identified for potential use for EUVL, and the common theme in these approaches is the transfer of the aerial image to a thin layer of refractory-containing material, which is then used as a dry O2 etch mask during a subsequent pattern transfer to the device layer. One TLI process that has been extensively examined for EUVL is the silylated top-surface imaging (TSI) technology, which is discussed in this paper. Using a new disilane silylation reagent, dimethylaminodimethyldisilane (DMDS) and 13.4 nm exposure, the TSI process has been sued to print 100 nm lines and spaces at equal pitch and 70 nm lines and spaces at a higher 1:2 pitch. The line edge roughness for the printed lines has been determined using a custom image analysis program and, as expected, varies with the particular EUV exposure system and numerical aperture. Exposures done with 193 nm lithography and the TSI process using DMDS are also shown for comparison to the EUV results.

Paper Details

Date Published: 5 June 1998
PDF: 9 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309590
Show Author Affiliations
Craig C. Henderson, Sandia National Labs. (United States)
David R. Wheeler, Sandia National Labs. (United States)
Tim P. Pollagi, Sandia National Labs. (United States)
Donna J. O'Connell, Sandia National Labs. (United States)
John E. M. Goldsmith, Sandia National Labs. (United States)
Aaron Fisher, Sandia National Labs. (United States)
Gregory Frank Cardinale, Sandia National Labs. (United States)
John M. Hutchinson, Intel Corp. (United States)
Veena Rao, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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