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Proceedings Paper

Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopy
Author(s): Tsuneo Urisu
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Paper Abstract

Synchrotron radiation (SR) stimulated etching shows unique material selectivities. SR decomposition of silicon hydrides on Si(100) surface measured by IR reflection absorption spectroscopy also shows unique reaction selectivities; SiH2 and SiH3 are decomposed but SiH is not. These material selectivities are qualitatively explained by the quenching of the excited electronic states. The material selectivity, reaction selectivity by the excitation energy tuning to the specific core electron excitations, and extremely high spatial resolutions owing to the short wavelength nature, SR stimulated etching is a potentially powerful technique for the nanometric processes.

Paper Details

Date Published: 5 June 1998
PDF: 7 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309588
Show Author Affiliations
Tsuneo Urisu, Institute for Molecular Science (Japan)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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