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Proceedings Paper

Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing
Author(s): Takeo Nagata; Yasuo Manabe; Yasuo Nara; Nobuo Sasaki; Yasuhide Machida
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Paper Abstract

In order to obtain highly accurate patterns for 0.13micrometers design rule and below by electron beam exposure system with high throughput, it is necessary to use block exposure system and to correct proximity effect. We have developed proximity effect correction system for block exposure system using supplementary exposure method. By using this system, line width difference for pattern area density from 5 percent to 40 percent decreased from 70nm to 15nm in 0.13 micrometers line and space patterns. Line width difference between the proximate and isolated region also decreased from 70nm to 20nm. Necessity of proximity effect correction considering coulomb interaction effect is also pointed out.

Paper Details

Date Published: 5 June 1998
PDF: 7 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309587
Show Author Affiliations
Takeo Nagata, Fujitsu Labs. Ltd. (Japan)
Yasuo Manabe, Fujitsu Ltd. (Japan)
Yasuo Nara, Fujitsu Labs. Ltd. (Japan)
Nobuo Sasaki, Fujitsu Labs. Ltd. (Japan)
Yasuhide Machida, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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