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Proceedings Paper

Electron-beam direct writing technology for fine gate patterning
Author(s): Kazuhiko Sato; Seiichiro Shirai; Hajime Hayakawa; Shinji Okazaki
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Paper Abstract

Electron beam (EB) lithography along with photo lithography is a good candidate for fabricating fine patterns smaller than 200 nm. We examined the pattern fidelity which was one of the most important points for applying EB lithography for proto-typing ULSIs. We used a direct writing EB system with a shaped beam. In this paper, we applied EB direct writing for the gate fabrication of 250-nm CMOS devices. The fidelity in resist patterns was 55 nm. The deviation was 21 nm, and the variation was +/- 17 nm. We also applied EB/DW and i-line exposure for the gate fabrication of 350-nm CMOS devices, and measured the source-drain current in nMOS transistors. We compared the Lg fluctuations which were calculated by Ids fluctuations. The magnitude of the fluctuations around Lg- equals 350 nm with EB/DW was less than half of that with i-line. According to these result, EB lithography is very effective for fabricating very fine gates of ULSIs.

Paper Details

Date Published: 5 June 1998
PDF: 8 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309586
Show Author Affiliations
Kazuhiko Sato, Hitachi, Ltd. (Japan)
Seiichiro Shirai, Hitachi, Ltd. (Singapore)
Hajime Hayakawa, Hitachi, Ltd. (Japan)
Shinji Okazaki, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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