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Proceedings Paper

Development of a next-generation e-beam lithography system for 1-Gb DRAM masks
Author(s): Tadashi Komagata; Yasutoshi Nakagawa; Hitoshi Takemura; Nobuo Gotoh; Kazumitsu Tanaka
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Paper Abstract

A new electron beam lithography system for masks needed in production of 1Gbit DRAM devices was developed and evaluated. The system features a variable shaped beam, 50 kV accelerating voltage, and a step and repeat stage, and incorporates new technologies, including a high resolution high current density electron optical system, a per-shot beam correction unit, a high precision beam detection system utilizing the curve fitting method, and a single-stage 20 bit beam deflection unit. The system achieves a minimum linewidth of 200 nm or less, pattern uniformity of 20 nm within field, and a positional accuracy, including field stitching accuracy, of 20nm within a field, resulting in an exposure speed at least 5 times faster than the existing model, the JBX-7000MVII.

Paper Details

Date Published: 5 June 1998
PDF: 13 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309585
Show Author Affiliations
Tadashi Komagata, JEOL Ltd. (Japan)
Yasutoshi Nakagawa, JEOL Ltd. (Japan)
Hitoshi Takemura, JEOL Ltd. (Japan)
Nobuo Gotoh, JEOL Ltd. (Japan)
Kazumitsu Tanaka, JEOL Ltd. (Japan)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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