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Proceedings Paper

Photomask in-plane distortion induced during e-beam patterning
Author(s): Bassam Shamoun; Michael A. Sprague; Roxann L. Engelstad; Franco Cerrina
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Paper Abstract

As feature sizes decrease and the demand for throughput increases, the semiconductor industry must concentrate on pattern positioning accuracy and process efficiency. Thermomechanical distortions induced in the photomask during fabrication may act to constrain the desired range of operating conditions to meet the manufacturing requirements for pattern placement accuracy and throughput. 3D finite element heat transfer and structural models have been developed to determine the global in-plane distortions induced in the photomask during e-beam patterning. Results obtained from these models show that the thermal-induced distortions, caused by global heating, are significant. Whereas, distortions due to the mechanical loading, caused by resist in situ stress relief, are minimal and can be neglected.

Paper Details

Date Published: 5 June 1998
PDF: 5 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309581
Show Author Affiliations
Bassam Shamoun, Univ. of Wisconsin/Madison (United States)
Michael A. Sprague, Univ. of Colorado/Boulder (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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